E-CMOS ENP60N03
The ENP60N03 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.| Part No. | ENP60N03 |
|---|---|
| Datasheet | ENP60N03 Download |
| Manufacturer |  E-CMOS |
| Description | 30V N-Channel MOS |
| Buy | Stock & Price |
DESCRIPTION
GENERAL DESCRIPTION
●VDS =30V，ID =60A RDS(ON)(Typ.)=4 mΩ @VGS=10V●High power and current handing capability
●Lead free product is acquired
●Surface mount package RDS(ON)(Typ.)=6.3 mΩ @VGS=4.5V
APPLICATIONS
●High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA●Networking DC-DC Power System
●Load switch Package
●DFN3×3-8L Schematic diagram Marking and pin assignment Ordering Information Part Number Storage Temperature ENP60N03FGR -55°C to +150°C Package DFN3×3-8L Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy( L=0.5mH) Maximum power dissipation Power Dissipation – Derate above 25℃ TC=25°C TC=100°C TC=25°C TC=25°C Operating junction Temperature range symbol VDS VGS ID IDP IAS EAS PD Tj limit unit 30 V ±20 V 60 45 A 180 A 48 A 120 mJ 28 1.67 W -55—150 ℃ E-CMOS Corp. ( 1/5 2F28N-Rev. F001 30V N-...
