E-CMOS ENP65S03
The ENP65S03 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.| Part No. | ENP65S03 |
|---|---|
| Datasheet | ENP65S03 Download |
| Manufacturer |  E-CMOS |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS =30V ID =65A RDS(ON)(Typ.)=6.5 mΩ @VGS=10V RDS(ON)(Typ.)=9.5 mΩ @VGS=4.5V● Very low on-resistance RDS(on)
● 150 °C operating temperature
● 100% UIS tested Application
● Synchronus Rectification in DC/DC and AC/DC Converters
● Industrial and Motor Drive applications Schematic diagram Marking and pin assignment XXXXX—Wafer Information YYYYY—Quality Code E-CMOS Corp. ( Page 1 of 6 2E10N-Rev.F001 30V N-Channel Enhancement Mode MOSFET ENP65S03 Ordering Information
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) E-CMOS Corp. ( Page 2 of 6 2E10N-Rev.F001 30V N-Channel Enhancement Mode MOSFET ENP65S03ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Thermal Characteristics A:The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
