Description
XTR25010 is a high-temperature, high reliability power transistor driver integrated circuit designed to drive normally ON and normally-OFF power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.
Features
- Operational beyond the -60°C to +230°C temperature range.
- High voltage supply from 7V to 35V.
- Low voltage supply from 4.5V to 5.5V.
- Integrated charge-pump inside pull-up drivers allowing 100% duty-
cycle PWM control signal.
- Double pull-up drivers with combined 8A peak and 2A continuous
current capability at TC=230°C.
- Two pull-down drivers with 3A peak current capability at TC=230°C
for each driver.
- Nonoverlapped pull-up and pul.
XTR25010 Datasheet
