1N6263 - Schottky Barrier Diode

Features

1. For general purpose.

1N6263 Schottky Barrier Diode by EDCON - Datasheet Preview — Datasheet preview – 1N6263

Datasheet Details

Part number	1N6263
Manufacturer	EDCON
File Size	269.23 KB
Description	Schottky Barrier Diode
Datasheet	1N6263 Datasheet
Additional preview pages of the 1N6263 datasheet.

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Full PDF Text Transcription

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1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. 3. This diode is also available in the Mini MELF case with type designation LL5711 and LL6263. Absolute Maximum Ratings(Tj=25℃) Parameter Peak inverse voltage Maximum single cycle surge 10us square wave Power dissipation Maximum junction temperature Storage temperature range Part 1N5711 1N6263 Symbol VRRM VRRM IFSM Ptot Tj TS Value 70 60 2.

Published: Jun 5, 2017 |