EDI 3RW
SILICON RECTIFIER DIODES
ELECTRICAL CHARACTERISTICS
(at TA=25°C Unless Otherwise Specified)ELECTRICAL CHARACTERISTICS
o 3W SERIES 2 Amp 300 Amp 3VDC max. 3RW SERIIES 1.5 Amp 200 Amp 4VDC max. 10 A 200 A Average Rectified Forward Current @ 50 C, IO (Fig.1) Max. Peak Surge Cureent,IFSM (8.3 ms) (Fig.2) Max.Forward Voltage Drop @ 2.0 A, VF Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and100 C, IR Ambient Operating Temperature Range,TA Storage Temperature Range,TSTG o o 5 A 150 A -55 C to +150 C o o o -55 C to +125 C o o o -55 C to +150 C NOTES:It is recommemded that a proper heat sink be used on the terminals of this device between the body and soldering point to prevent damage from excess heat. Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 OC EDI reserves the right to change these specifications at any time without notice. 3W 3RW FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 2 100 FIG.2 NON- REPETITIVE SURGE CURRENT 0.1SEC 1.0SEC 1.5 % MAXIMUM...