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EDH816H16C25 - High Speed 256K SRAM Module

Key Features

  • TheEDH816H16C isa256Kbithigh speed CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless chip carriers, mounted on a multilayered ceramic substrate. The 36 pin vertical dual-in-line package (100 mil centers) provides high density in addition to fast access times of 25, 35, and 45 ns. All inputs and outputs are TTLcompatible and operate from a single 5volt supply. EDI Military Modules are constructed using semiconductor components which have been 100% screened to the test methods of.

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Datasheet Details

Part number EDH816H16C25
Manufacturer EDI
File Size 294.41 KB
Description High Speed 256K SRAM Module
Datasheet download datasheet EDH816H16C25 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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~EDI 16Kx16 Static RAM CMOS, High Speed Module EDH816H16C25135145 High Speed 256K SRAM Module Features TheEDH816H16C isa256Kbithigh speed CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless chip carriers, mounted on a multilayered ceramic substrate. The 36 pin vertical dual-in-line package (100 mil centers) provides high density in addition to fast access times of 25, 35, and 45 ns. All inputs and outputs are TTLcompatible and operate from a single 5volt supply. EDI Military Modules are constructed using semiconductor components which have been 100% screened to the test methods of MIL-STD-883C, Class B.