EGmicro EG2113D
the EG2113D Datasheet 2019 ©Yijing Microelectronics Co., Ltd 2 / 13 Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip Contents 1. Description EG2113D is a cost-effective high-power MOS transistor, IGBT transistor Gate Drive dedicated chip, integrated logic signal input processing circuit, dead zone control circuit, latch circuit, level displacement circuit, pulse filter circuit, bootstrap diode and output drive circuit...DESCRIPTION
First draft ofFEATURES
............................................................................................................................................................. 4 2.DESCRIPTION
......................................................................................................................................................... 4 3. Application Areas .............................................................................................................................................. 4 4. Pin ....................................................................................................................................................................... 5 4.1. Pin definition ...................................................................................................................................... 5 4.2. Pin description ...................................................................................................................................