1N5820S
1N5820S is SCHOTTKY BARRIER RECTIFIER DIODES manufactured by EIC Semiconductor.
FEATURES
:
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- High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop
SCHOTTKY BARRIER RECTIFIER DIODES
D2A
0.161 (4.1) 0.154 (3.9)
1.00 (25.4) MIN.
0.284 (7.2) 0.268 (6.8)
MECHANICAL DATA :
- Case : D2A Molded plastic
- Epoxy : UL94V-O rate flame retardant
- Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
- Polarity : Color band denotes cathode end
- Mounting position : Any
- Weight : 0.645 gram
0.040 (1.02) 0.0385 (0.98)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375", 9.5mm Lead Length at TL = 95 ° C Peak Forward Surge Current, 8.3ms single half sine wave Superimposed on rated load (JEDEC Method) TL = 75° C Maximum Forward Voltage at IF = 3.0 Amp. Maximum Reverse Current at Rated DC Blocking Voltage (Note 1) Typical Thermal Resistance (Note 2) Junction Temperature Range Storage Temperature Range
(Note 1)
SYMBOL
VRRM VRMS VDC IF(AV)
20 14 20
1N5821S
30 21 30 3.0
1N5822S
40 28 40
UNIT
Volts Volts Volts Amps.
IFSM VF IR IR(H) RθJL TJ TSTG 0.475
80 0.500 2.0 20 20
- 65 to + 125
- 65 to + 125 0.525
Amps. Volt. m A m A ° C/W °C...
