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1N5821S

Manufacturer: EIC Semiconductor

1N5821S datasheet by EIC Semiconductor.

1N5821S datasheet preview

1N5821S Datasheet Details

Part number	1N5821S
Datasheet	1N5821S_EICdiscreteSemiconductors.pdf
File Size	28.17 KB
Manufacturer	EIC Semiconductor
Description	SCHOTTKY BARRIER RECTIFIER DIODES

1N5821S Overview

1N5820S - 1N5822S PRV : 20 - 40 Volts IO : 3.0.

1N5821S Key Features

High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forwa
Case : D2A Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.645 gram
65 to + 125
65 to + 125 0.525
1N5822S )

1N5821 from other manufacturers

View 1N5821 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	1N5821	Schottky Diodes	Kexin
	1N5821	Power Diodes	Multicomp
	1N5821	Schottky Barrier Plastic Rectifier	Vishay
	1N5821	Schottky Barrier Rectifiers	LRC
	1N5821	3.0 Amp. Schottky Barrier Rectifiers	JGD

More Datasheets from EIC Semiconductor

View all EIC Semiconductor datasheets

Part Number	Description
1N5820S	SCHOTTKY BARRIER RECTIFIER DIODES
1N5822S	SCHOTTKY BARRIER RECTIFIER DIODES
1N5391G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5392G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5393G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5394G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5395G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5396G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5397G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5398G	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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