BR3500W
BR3500W is SILICON BRIDGE RECTIFIERS manufactured by EIC Semiconductor.
- BR3510W
PRV : 50
- 1000 Volts Io : 35 Amperes
Features
:
- -
- -
- - High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength
SILICON BRIDGE RECTIFIERS BR50W
0.732 (18.6) 0.692 (17.5)
1.130 (28.7) 1.120 (28.4)
0.470 (11.9) 0.430 (10.9)
0.21 (5.3) 0.20 (5.1)
MECHANICAL DATA :
- Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
- Epoxy : UL94V-O rate flame retardant
- Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed
- Polarity : Polarity symbols marked on case
- Mounting position : Bolt down on heat-sink with silicone thermal pound between bridge and mounting surface for maximum heat transfer efficiency
- Weight : 15.95 grams
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 17.5 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYMBOL VRRM V RMS VDC IF(AV)
BR BR BR BR BR BR BR 3500W 3501W 3502W 3504W 3506W 3508W 3510W 50 35 50 100 70 100 200 140 200 400 280 400 35 600 420 600 800 560 800 1000 700 1000
UNITS Volts Volts Volts Amp.
IFSM It VF IR IR(H) RθJC RθJA TJ...
