BR5006W
BR5006W is SILICON BRIDGE RECTIFIERS manufactured by EIC Semiconductor.
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname. http. : // .eicsemi.
BR5000W
- BR5010W
PRV : 50
- 1000 Volts Io : 50 Amperes
Features
:
- -
- -
- - High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength
1.130 (28.7) 1.120 (28.4)
SILICON BRIDGE RECTIFIERS BR50W
0.732 (18.6) 0.692 (17.5)
0.470 (11.9) 0.430 (10.9)
0.21 (5.3) 0.20 (5.1)
MECHANICAL DATA :
- Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
- Epoxy : UL94V-O rate flame retardant
- Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed
- Polarity : Polarity symbols marked on case
- Mounting position : Bolt down on heat-sink with silicone thermal pound between bridge and mounting surface for maximum heat transfer efficiency
- Weight : 15.95 grams
0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11)
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100...
