BY253 - SILICON RECTIFIER DIODES

EIC discrete Semiconductors

Key Features

:.
High current capability High surge current capability High reliability Low reverse current Low forward voltage drop.

BY253 silicon rectifier diodes by EIC discrete Semiconductors - Datasheet Preview

Datasheet Details

Part number	BY253
Manufacturer	EIC discrete Semiconductors
File Size	38.95 KB
Description	SILICON RECTIFIER DIODES
Datasheet	BY253 Datasheet

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Other Datasheets by EIC discrete Semiconductors

Part Number	Description
BY251	SILICON RECTIFIER DIODES
BY252	SILICON RECTIFIER DIODES
BY254	SILICON RECTIFIER DIODES
BY296	FAST RECOVERY RECTIFIER DIODES
BY297	FAST RECOVERY RECTIFIER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BY251 - BY255 PRV : 200 - 1300 Volts Io : 3.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 1.00 (25.4) MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.