Datasheet Details
| Part number | ECP200 |
|---|---|
| Manufacturer | EIC discrete Semiconductors |
| File Size | 86.83 KB |
| Description | 2.0 WATT POWER AMPLIFIER |
| Datasheet |
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The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency.
This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process.
The devices have a 50 Ohms input impedance and pre-matched output.
| Part number | ECP200 |
|---|---|
| Manufacturer | EIC discrete Semiconductors |
| File Size | 86.83 KB |
| Description | 2.0 WATT POWER AMPLIFIER |
| Datasheet |
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| Part Number | Description | Manufacturer |
|---|---|---|
| ECP200D | High Linearity InGaP HBT Amplifier | WJ Communication |
| ECP200G | High Linearity InGaP HBT Amplifier | WJ Communication |
| ECP203 | High Linearity InGaP HBT Amplifier | WJ Communication |
| ECP2459 | Step-Down Converter | Energy Core |
| ECP-5414 | AMD Geode GX1 Communication Platform | ETC |
| Part Number | Description |
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.