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ECP200 Datasheet

2.0 Watt Power Amplifier

Manufacturer: EIC Semiconductor

ECP200 Overview

The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output.

ECP200 Key Features

  • 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Relia

ECP200 Applications

  • 3dB Note 2: ACPR measured for 3GPP test model 1, 64 DPCH. Channel Bandwidth = 3.84MHz. Frequency offset: +/- 5MHz

ECP200 Distributor