FBR1506 Datasheet | EIC Semiconductor

FEATURES : - - - - - - - High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) MECHANICAL DATA : - Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation - Epoxy : UL94V-O rate flame retardant - Terminals : plated .25" (6.35 mm). Faston - Polarity : Polarity symbols marked on case - Mounting position : Bolt down on heat-sink with silicone thermal pound between bridge and mounting surface for maximum heat transfer efficiency. - Weight : 17.1 grams Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 7.5 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) Trr RθJC TJ TSTG FBR FBR FBR FBR FBR FBR FBR UNIT 1500 1501 1502 1504 1506 1508 1510 50 35 50 100 70 100 200 140 200 400 280 400 15 300 375 1.3 10 200 150 1.9 - 50 to + 150 - 50 to + 150 250 500 600 420 600 800 560 800 1000 Volts 700 Volts Amps. Amps. A2S Volts µA µA ns °C/W °C °C 1000 Volts Maximum Reverse Recovery Time (Note 1)...