• Part: GN3D
  • Description: GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
  • Manufacturer: EIC Semiconductor
  • Size: 39.27 KB
Download GN3D Datasheet PDF
EIC Semiconductor
GN3D
GN3D is GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT manufactured by EIC Semiconductor.
FEATURES : - - - - - Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMC (DO-214AB) 1 .1 ± 0.3 ± 0.15 ± 0.15 3.0 ± 0.2 0.2 ± 0.0 7 5.8 ± 0.15 2.3 ± 0.2 MECHANICAL DATA : - - - - - - Case : SMC Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.21 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL GN3A VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ TJ TSTG 50 35 50 GN3B GN3G GN3J GN3K GN3M UNIT V V V A A V µA µA p F °C °C 100 70 100 200 140 200 400 280 400 3.0 150 1.0 5.0 50 50 - 65 to + 175 - 65 to + 175 600 420 600 800 560 800 1000 700 1000 Typical Junction Capacitance (Note1) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of...