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11E1 Datasheet PDF

EIC Semiconductor 11E1

SILICON RECTIFIER DIODES

Part No. 11E1
Datasheet 11E1 Download
Manufacturer
EIC Semiconductor
Description SILICON RECTIFIER DIODES
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11E1 datasheet page 1 preview

FEATURES

: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

MECHANICAL DATA

: * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram SILICON RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Curren
11E1 page 2 preview