EIC Semiconductor 1N4001
SILICON RECTIFIER DIODES
FEATURES
: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS FreeMECHANICAL DATA
: * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.335 gram 0.108 (2.74) 0.078 (1.99) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.205 (5.20) 0.161 (4.10) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters )MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 C Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp.