EIC Semiconductor 1N4149
HIGH SPEED SWITCHING DIODE
| Part No. | 1N4149 |
|---|---|
| Datasheet | 1N4149 Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH SPEED SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
: * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS FreeMECHANICAL DATA
: * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Surge Forward Current at t < 1s and Tj = 25°C Maximum Power Dissipation , Ta = 25 °C Maxim