1N4150
1N4150 is HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES
:
- High switching speed: max. 4 ns
- Continuous reverse voltage:max. 50 V
- Repetitive peak reverse voltage:max. 75 V
- Repetitive peak forward current: max. 600 m A
- Pb / Ro HS Free
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
- 35 Glass (DO-204AH)
0.079(2.0 )max.
Cathode Mark
0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current Maximum Power Dissipation Maximum Repetitive Peak Forward Current Maximum Surge Forward Current at t = 1s , Tj = 25°C Maximum Junction Temperature Storage Temperature Range
Symbol
VRRM VRM
IF PD IFRM IFSM TJ TS
Value
75 50 200 500 600 0.5 200 -65 to + 200
Unit
V V m A m W m A A °C °C
Electrical...
