• Part: 1N4151
  • Description: HIGH SPEED SWITCHING DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 29.77 KB
Download 1N4151 Datasheet PDF
EIC Semiconductor
1N4151
1N4151 is HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES : - High switching speed: max. 4 ns - Reverse voltage:max. 50 V - Peak reverse voltage:max. 75 V - Pb / Ro HS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current Half Wave Rectification with Resistive Load , f ≥ 50Hz (1) Maximum non-repetitive peak forward current at t = 1s Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Symbol VRM VR IF IF(AV) IFSM PD TJ TS Value 75 50 200 0.5 500 175 -65 to + 175 Unit V V m A m A A m W °C °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit...