1N4154
1N4154 is HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES
:
- High switching speed: max. 2 ns
- Reverse voltage:max. 25 V
- Repetitive peak reverse voltage:max. 35 V
- Pb / Ro HS Free
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
- 35 Glass (DO-204AH)
0.079(2.0 )max.
Cathode Mark
0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Forward Current Maximum Repetitive Peak Forward Current Maximum Peak Forward Surge Current at tp = 1µs Thermal Resistance Junction to Ambient (l =4mm, TL = constant) Power Dissipation (l = 4mm, TL ≤ 25 °C) Operating Junction Temperature Storage Temperature Range
Symbol
VRRM VR IF(AV) IF IFRM IFSM RӨJA PD TJ TSTG
Value
35 25 150 300 500 2.0 350 500 175 -65 to + 175
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Reverse Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance
Reverse Recovery Time
VR = 25 V
- VR = 25 V , Ta = 150 °C
- VF
IF = 30 m A
-...
