1N4447
1N4447 is HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES
:
- High switching speed: max. 4 ns
- Reverse voltage:max. 75V
- Peak reverse voltage:max. 100 V
- Pb / Ro HS Free
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
Certificate TH97/10561QM
Certificate TW00/17276EM
HIGH SPEED SWITCHING DIODE
- 35 Glass (DO-204AH)
0.079(2.0 )max.
Cathode Mark
0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics ( Ta = 25 °C)
Parameter
Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Forward DC Current Maximum Average Forward Current Maximum Surge Forward Current at tp = 1 µs Power Dissipation Maximum Junction Temperature Storage Temperature Range
Symbol
VRM VR IF IF(AV) IFSM PD TJ TSTG
Value
100 75 200 150 2 500 200 -65 to + 200
Unit
V V m A m A A m W °C °C
Electrical Characteristics ( Ta = 25 °C)
Parameter
Symbol
Reverse Current
Forward Voltage Reverse Breakdown Voltage Diode...
