EIC Semiconductor 1N4448
HIGH SPEED SWITCHING DIODE
| Part No. | 1N4448 |
|---|---|
| Datasheet | 1N4448 Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH SPEED SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
:● High switching speed: max. 4 ns
● Reverse voltage:max. 75V
● Peak reverse voltage:max. 100 V
● Pb / RoHS Free
MECHANICAL DATA
: Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current (1) Half Wave Rectification with Resistive Load , f ≥ 50 Hz Maximum Surge Forward Current at t < 1s , Tj = 25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range VRM VR IF IF(AV) IFSM PD TJ TS Note : (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Value 100 75 200 150 0.5 500 175 -65 to + 175 Unit V...