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1N5611

Manufacturer: EIC Semiconductor

1N5611 datasheet by EIC Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

1N5611 datasheet preview

1N5611 Datasheet Details

Part number 1N5611
Datasheet 1N5611 1N5610 Datasheet (PDF)
File Size 82.63 KB
Manufacturer EIC Semiconductor
Description UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5611 page 2

1N5611 Overview

1N5610 - 1N5613 UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR VWM.

1N5611 Key Features

  • Peak pulse power: 1500W at 10/1000 μs
  • Extensive rang in Working Peak "Standoff"
  • High surge current
  • Excellent robust construction
  • Pb / RoHS Free
  • Case : DO-201 Molded plastic
  • Epoxy : UL94V-O rate flame retardant
  • Lead : Axial lead solderable per MIL-STD-202
  • Polarity : Color band denotes cathode
  • Mounting position : Any

1N5611 from other manufacturers

View 1N5611 datasheet index

Brand Logo Part Number Description Other Manufacturers
Microsemi Logo 1N5611 Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Microsemi
EIC Semiconductor logo - Manufacturer

More Datasheets from EIC Semiconductor

View all EIC Semiconductor datasheets

Part Number Description
1N5610 UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5612 UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5613 UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5614 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5616 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5618 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5620 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5622 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5624 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5625 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N5611 Distributor

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