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1N5613

Manufacturer: EIC Semiconductor

1N5613 datasheet PDF by EIC Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

1N5613 datasheet preview

1N5613 Datasheet Details

Part number	1N5613
Datasheet	1N5613 1N5610 Datasheet (PDF)
File Size	82.63 KB
Manufacturer	EIC Semiconductor
Description	UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

1N5613 Overview

1N5610 - 1N5613 UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR VWM.

1N5613 Key Features

Peak pulse power: 1500W at 10/1000 μs
Extensive rang in Working Peak "Standoff"
High surge current
Excellent robust construction
Pb / RoHS Free
Case : DO-201 Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202
Polarity : Color band denotes cathode
Mounting position : Any

1N5613 from other manufacturers

View 1N5613 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	1N5613	Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors	Microsemi

More Datasheets from EIC Semiconductor

View all EIC Semiconductor datasheets

Part Number	Description
1N5610	UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5611	UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5612	UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N5614	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5616	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5618	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5620	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5622	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5624	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5625	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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