EIC Semiconductor 1SS166
SCHOTTKY BARRIER DIODE
| Part No. | 1SS166 |
|---|---|
| Datasheet | 1SS166 Download |
| Manufacturer |  EIC Semiconductor |
| Description | SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
:● Low forward voltage
● High breakdown voltage
● Low diode capacitance.
● Pb / RoHS Free
MECHANICAL DATA
: Case: DO-34 Glass Case Weight: approx. 0.11g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specifie.d) Parameter Symbol Reverse Voltage VR Average Rectified Current Io Power Dissipation PD Junction Temperature TJ Storage temperature range Tstg Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Value 10 15 150 100 -55 to + 100 Unit V mA mW °C °CELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Reverse Current IR VR = 10 V VR = 2 V Forward Voltage VF IF = 1 mA IF = 10 mA Diode Capacitance Cd VR = 0V, f = 1MHz Forward Voltage Deviation ∆VF IF = 10 mA Min Typ Max Unit - - 10 μA - - 0.2 μA 365 - 430 mV 520 - 600 mV - - 1.2 pF - - ±5 mV Page 1 of 2 Rev.