• Part: BY550-800G
  • Description: GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 97.46 KB
Download BY550-800G Datasheet PDF
EIC Semiconductor
BY550-800G
BY550-800G is GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES manufactured by EIC Semiconductor.
- Part of the BY550-50G comparator family.
FEATURES : - Glass passivated chip - High current capability - High surge current capability - High reliability - Low reverse current - Low forward voltage drop - Pb / Ro HS Free 0.208 (5.30) 0.188 (4.80) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20) MECHANICAL DATA : - Case : DO-201AD Molded plastic - Epoxy : UL94V-0 rate flame retardant - Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed - Polarity : Color band denotes cathode end - Mounting position : Any - Weight : 0.929 grams 0.052 (1.33) 0.048 (1.23) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 60°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.0 Amps. Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range SYMBOL BY550...