EIC Semiconductor BYV28
EPITAXIAL AVALANCHE DIODES
| Part No. | BYV28 |
|---|---|
| Datasheet | BYV28 Download |
| Manufacturer |  EIC Semiconductor |
| Description | EPITAXIAL AVALANCHE DIODES |
| Buy | Stock & Price |
FEATURES
: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Very fast recovery * Pb / RoHS FreeMECHANICAL DATA
: * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram EPITAXIAL AVALANCHE DIODES D2A 0.161 (4.1) 0.154 (3.9) 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters )MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL BYV28-50 BYV28-100 BYV28-150 BYV28-200 UNIT Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Min. Reverse Avalanche Breakdown Voltage @ IR =...