EIC Semiconductor BZX55C75
SILICON ZENER DIODES
BZX55C75 Specifications
- Polarity : Unidirectional
- Min Breakdown Voltage : 48.5V
- Terminals : 2
- Reverse Standoff Voltage : 43.6V
- Forward Voltage : 1V
- Max Forward Surge : 2.5A
- Reverse Recovery Time : 50ns
- Zener Voltage : 75V
- Zener Current : 2.5mA
- Max Power Dissipation : 500mW
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BZX55C75 |
|---|---|
| Datasheet | BZX55C75 Download |
| Manufacturer |  EIC Semiconductor |
| Description | SILICON ZENER DIODES |
| Buy | Stock & Price |
FEATURES
: * Complete 2.0 to 100 Volts * High surge current capability * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MECHANICAL DATA
* Case : Molded glass * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end. When operated in zener mode, cathode will be positive with respect to anode * Mounting position : Any * Weight : 0.13 gram (approx.)MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation (Note1) Maximum Forward Voltage at IF =100 mA Maximum Thermal Resistance Junction to Ambient Air (Note1) Junction Temperature Range Storage Temperature Range Symbol PD VF RθJA Tj Ts Value 500 1.0 300 - 65 to + 200 - 65 to + 2