EIC Semiconductor D4SB80
SILICON BRIDGE RECTIFIER
FEATURES
: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS FreeMECHANICAL DATA
: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 4.28 grams 0.130(3.7) 0.146(3.3) +~ ~ 0.303 (7.7) 0.287 (7.3) 0.075 (1.9) 0.060 (1.5) 0.043 (1.1) 0.035 (0.9) 0.031 (0.8) 0.023 (0.6) 0.153 (3.9) 0.134 (3.4) Dimensions in inches andMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(If not specified Tc = 25 °C) RATING SYMBOL Maximum Reverse Voltage Maximum Average Rectified Forward With heatsink Tc = 108 °C Current (50 Hz sine wave, R-load) Without heatsink Ta = 25 °C Maximum Peak Surge Forward Current, 50Hz sine wave, Non-repetitive 1 cycle peak value, TJ = 25 °C Maximum Forward Voltage at IF = 2.0 A...