• Part: DB01M
  • Description: SILICON BRIDGE RECTIFIER
  • Manufacturer: EIC Semiconductor
  • Size: 30.26 KB
Download DB01M Datasheet PDF
EIC Semiconductor
DB01M
DB01M is SILICON BRIDGE RECTIFIER manufactured by EIC Semiconductor.
FEATURES : - High current capability - High surge current capability - High reliability - Low reverse current - Low forward voltage drop - Ideal for printed circuit board - Pb / Ro HS Free MECHANICAL DATA : - Case : Molded plastic - Epoxy : UL94V-O rate flame retardant - Terminals : Plated Lead solderable per MIL-STD- 202, Method 208 - Polarity : Polarity symbols marked on body - Mounting position : Any - Weight : 0.42 gram 0.255 (6.5) 0.245 (6.2) 0.135 (3.4) 0.115 (2.9) 0.355 (8.5) 0.320 (8.1) 0.205 (5.2) 0.195 (5.0) 0.355 (8.5) 0.320 (8.1) 0.165 (4.2) 0.155 (3.9) Dimensions in inches and (millimeter ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. 60 Hz, resistive or inductive load. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Rectified Current at Ta = 40°C Maximum Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Instantaneous Forward Voltage per element at IF = 1.0 A Maximum DC Reverse Current Ta = 25°C at Rated DC Blocking Voltage Ta = 125°C Junction and Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) TJ, TSTG Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC VALUE 100 70 100 1.0 10 1.1 10 500 - 55 to + 150 UNIT V V V...