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DB3 Datasheet PDF

EIC Semiconductor DB3

SILICON BI-DIRECTIONAL DIACS

Part No. DB3
Datasheet DB3 Download
Manufacturer
EIC Semiconductor
Description SILICON BI-DIRECTIONAL DIACS
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DB3 datasheet page 1 preview

FEATURES

: * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free

MECHANICAL DATA

: * Case: DO-35 Glass Case * Weight: approx. 0.11g TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SILICON BI-DIRECTIONAL DIACS DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ta = 25 °C) RATING Minimum Breakover Voltage Typical Breakover Voltage Maximum Breakover Voltage Maximum Breakover Current Maximum Breakover Voltage Symmetry Minimum Dynamic Breakback Voltage ∆I = [IBR to IF = 10 mA] Maximum Peak Current at Ta = 50 °C (10 μs duration, 120 cycle repetition rate) Maximum Peak output Voltage at Ta = 50 °C ** Thermal Impedance Junction to Ambient Operating Junction Temperature Range Storage Temperature Range SYMBOL VBR1 and VBR2 (Min.) VBR1 and VBR2 (Typ.) VBR1 and VBR2 (Max.) I(BR)1 and I(BR)2 [V(BR)1] - [V(BR)2] | ΔV ± | IP eP RӨJA TJ TSTG DB3 28...