• Part: DB4
  • Description: SILICON BI-DIRECTIONAL DIACS
  • Manufacturer: EIC Semiconductor
  • Size: 124.28 KB
Download DB4 Datasheet PDF
EIC Semiconductor
DB4
FEATURES : - VBR : 32 V and 40 V - Low breakover current - Pb / Ro HS Free MECHANICAL DATA : - Case: DO-35 Glass Case - Weight: approx. 0.11g TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SILICON BI-DIRECTIONAL DIACS - 35 Glass (DO-204AH) 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C) RATING Minimum Breakover Voltage Typical Breakover Voltage Maximum Breakover Voltage Maximum Breakover Current Maximum Breakover Voltage Symmetry Minimum Dynamic Breakback Voltage ∆I = [IBR to IF = 10 m A] Maximum Peak Current at Ta = 50 °C (10 μs duration, 120 cycle repetition rate) Maximum Peak output Voltage at Ta = 50 °C - - Thermal Impedance Junction to Ambient Operating Junction Temperature Range Storage Temperature Range SYMBOL VBR1 and VBR2 (Min.) VBR1 and VBR2 (Typ.) VBR1 and VBR2 (Max.) I(BR)1 and I(BR)2 [V(BR)1] - [V(BR)2] | ΔV ± | IP e P RӨJA TJ...