• Part: EG1Y
  • Description: ULTRA FAST RECOVERY RECTIFIER DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 30.81 KB
Download EG1Y Datasheet PDF
EIC Semiconductor
EG1Y
EG1Y is ULTRA FAST RECOVERY RECTIFIER DIODE manufactured by EIC Semiconductor.
FEATURES : - High current capability - High surge current capability - High reliability - Low reverse current - Low forward voltage drop - Fast switching for high efficiency - Pb / Ro HS Free MECHANICAL DATA : - Case : DO-41 Molded plastic - Epoxy : UL94V-O rate flame retardant - Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed - Polarity : Color band denotes cathode end - Mounting position : Any - Weight : 0.339 gram 0.108 (2.74) 0.078 (1.99) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.205 (5.20) 0.161 (4.10) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Rectified Forward Current Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sine wave, Single Shot ) Maximum Forward Voltage at IF = 1.1 A Maximum Reverse Current at VR = VRM , Ta = 25°C Maximum Reverse Current at VR = VRM , Ta = 100°C Maximum Reverse Recovery Time ( Note 1 ) Junction Temperature Range Storage Temperature Range SYMBOL VRM VRSM IF(AV) IFSM VF IR IR(H) Trr TJ TSTG Note: ( 1 ) Reverse Recovery Test Conditions : IF = 100 m A, IRP = 100 m A. Page 1 of 2 VALUE 70 70 1.1 1.2 0.1 0.5 100 - 40 to + 150 - 40 to +...