EIC Semiconductor GBJ2501
SILICON BRIDGE RECTIFIERS
FEATURES
: * Glass Passivated Die Construction * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * High current capability * Very good heat dissipation * Pb / RoHS FreeMECHANICAL DATA
: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) 20 ± 0.3 13.5 ± 0.3 ∅ 3.2 ± 0.1 + ~~ 1.0 ± 0.1 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.7 ± 0.2 0.7 ± 0.1 Dimensions in millimetersMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Rec