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GE1S-G - HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE

Features

  • :.
  • Glass passivated junction chip.
  • High surge current capability.
  • High reliability.
  • Low reverse current.
  • Fast recovery time.
  • Pb Free / RoHS Compliant.

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Datasheet Details

Part number GE1S-G
Manufacturer EIC
File Size 34.81 KB
Description HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE
Datasheet download datasheet GE1S-G Datasheet

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Full PDF Text Transcription

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www.eicsemi.com GE1S-G HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE PRV : 2500 Volts Io : 0.5 Ampere FEATURES : * Glass passivated junction chip * High surge current capability * High reliability * Low reverse current * Fast recovery time * Pb Free / RoHS Compliant MECHANICAL DATA : * Case : DO-215AC Molded plastic * Epoxy : UL94V-0 rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) DO-215AC 4.3 ± 0.2 2.6 ± 0.2 2.4 ± 0.2 6.2 ± 0.2 1.4 ± 0.
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