LMN1A - SILICON RECTIFIER DIODES

EIC

Key Features

:.
Glass passivated junction chip.
High current capability.
High reliability.
Low reverse current.
Low forward voltage drop.
Pb / RoHS Free 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10).

LMN1A silicon rectifier diodes by EIC - Datasheet Preview

Datasheet Details

Part number	LMN1A
Manufacturer	EIC
File Size	103.19 KB
Description	SILICON RECTIFIER DIODES
Datasheet	LMN1A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 LMN1A - LMN1M GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts M1A Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN.