MMBT4140
.eicsemi.
NPN Silicon General Purpose Transistor
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
SOT-23 Plastic Package
Value
Unit
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current
Total Power Dissipation
VCBO VCEO VEBO
IC ICM IBM
Ptot
40 30 5 1 2 1 200 1) 450 2)
V V V A A A m W
Junction Temperature
Tj
Storage Temperature Range
Tstg
- 65 to +150
1) Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2) Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2
Page 1 of 2
Rev. 02 : March 24, 2005
.eicsemi.
Characteristics at Tamb = 25 OC Parameter
DC Current Gain at VCE = 5 V, IC = 1 m A at VCE = 5 V, IC = 500 m A at VCE = 5 V, IC = 1 A Collector Base Cutoff Current at VCB = 40 V Collector Emitter Cutoff Current at VCE...
