EIC Semiconductor R2M
AVALANCHE DIODE
FEATURES
: * 600 W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less than 1.0 ps from 0 volts to BV min. * Low Leakage < 5.0 µA above 10 V. * Pb / RoHS FreeMECHANICAL DATA
: * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram AVALANCHE DIODE D2 0.161 (4.1) 0.154 (3.9) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters )MAXIMUM RATINGS
AND ELECTRICAL Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. CHARACTERISTICS RATING Peak Power Dissipation at TP = 1 ms (Note 1) Steady State Power Dissipation at TL =