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RBV1008D Datasheet PDF

EIC Semiconductor RBV1008D

SILICON BRIDGE RECTIFIERS

Part No. RBV1008D
Datasheet RBV1008D Download
Manufacturer
EIC Semiconductor
Description SILICON BRIDGE RECTIFIERS
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RBV1008D datasheet page 1 preview

FEATURES

: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1

MECHANICAL DATA

: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 2.0 ± 0.2 0.7 ± 0.1 ±0.2 ±0.2 ±0.2 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING Maximum Recurrent Peak Reverse Voltage M...
RBV1008D page 2 preview