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RBV3508 Datasheet PDF

EIC Semiconductor RBV3508

SILICON BRIDGE RECTIFIERS

Part No. RBV3508
Datasheet RBV3508 Download
Manufacturer
EIC Semiconductor
Description SILICON BRIDGE RECTIFIERS
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RBV3508 datasheet page 1 preview

FEATURES

: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1

MECHANICAL DATA

: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms.
RBV3508 page 2 preview