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RD10E Datasheet PDF

EIC Semiconductor RD10E

SILICON ZENER DIODES

Part No. RD10E
Datasheet RD10E Download
Manufacturer
EIC Semiconductor
Description SILICON ZENER DIODES
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RD10E datasheet page 1 preview

FEATURES

: * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

MECHANICAL DATA

Case: DO-35 Glass Case Weight: approx. 0.13g SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )

MAXIMUM RATINGS

Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation Forward Current Junction Temperature Range Storage Temperature Range Symbol PD IF Tj Ts Value 500 200 - 55 to + 175 - 55 to + 175 Unit mW mA °C °C Page 1 of 4 Power Dissipation , PD (mW) Derating Curve 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 200 Ambient Temperture , Ta (°C) Rev. 02 : March 25, 2005

ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified Type Number Suffix RD2.0E RD2.2E RD2.4E RD2.7E RD3.0E RD3.3E RD3.6E
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