• Part: RG1C
  • Description: ULTRA FAST RECOVERY RECTIFIER DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 40.37 KB
Download RG1C Datasheet PDF
EIC Semiconductor
RG1C
RG1C is ULTRA FAST RECOVERY RECTIFIER DIODE manufactured by EIC Semiconductor.
FEATURES : - High current capability - High surge current capability - High reliability - Low reverse current - Low forward voltage drop - Fast switching for high efficiency - Pb / Ro HS Free MECHANICAL DATA : - Case : DO-15 Molded plastic - Epoxy : UL94V-0 rate flame retardant - Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed - Polarity : Color band denotes cathode end - Mounting position : Any - Weight : 0.4 gram 0.142 (3.6) 0.102 (2.6) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Rectified Forward Current (Note1) Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sine wave, Single Shot ) Maximum Forward Voltage at IF = 0.7 A Maximum Forward Current Maximum Reverse Current at Reverse voltage Maximum Reverse Current at Reverse voltage Ta = 100 °C Maximum Reverse Recovery Time ( Note 2 ) Junction Temperature Range Storage Temperature Range SYMBOL VRM VRSM IF(AV) IFSM VF IF IR IR(H) Trr TJ TSTG VALUE 1000 1000 0.7 10 3.3 0.5 20 0.25 100 - 40 to + 150 - 40 to + 150 UNIT V V A A V A µA m A ns °C °C Notes : (1) Lead Length 10 mm. (2) Reverse Recovery Test Conditions : IF = 100 m A, IRP = 100 m A. Page 1 of 2 Rev. 03 : February 28, 2014 .eicsemi. RATING AND CHARACTERISTIC CURVES ( RG1C...