EIC Semiconductor SE1N
HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE
| Part No. | SE1N |
|---|---|
| Datasheet | SE1N Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE |
| Buy | Stock & Price |
FEATURES
: * Glass passivated junction chip * High surge current capability * High reliability * Low reverse current * Fast recovery time * Pb Free / RoHS CompliantMECHANICAL DATA
: * Case : SMA Molded plastic * Epoxy : UL94V-0 rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) 5.65 5.35 4. 6 4. 2 SMA 2.3 2.1 1.5 1.1 0.2 0.27 2.5 0.13 2.9 2.1 2.5 2.1 1.7 Dimensions in millimetersMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75°C at 8.3 ms Single Half sine-wave Maximum Non-Repetitive Peak Forward Surge Current Maximum Peak Forward Voltage at IF = 1.0 A Maximum DC Reverse Current Tj = 25 °C at Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Tj = 100 °C Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) Trr TJ TSTG Note : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.