ELM ELM4N6056FDA-N
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=23A.| Part No. | ELM4N6056FDA-N |
|---|---|
| Datasheet | ELM4N6056FDA-N Download |
| Manufacturer |  ELM |
| Description | Single N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Vds=60V● Id=58A (Vgs=10V)
● Rds(on) = 8.5mΩ (Vgs=10V)
● Rds(on) = 12.5mΩ (Vgs=4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 60 ±20 58.0 36.6 125 26.5 23 52 -55 to 150 -55 to 150 Unit Note V V A 1, 6 A 2 mJ 3 A W 4 °C °C
●Thermal characteristics Parameter Symbol Typ. Thermal resistance junction-ambient (Steady state) Rθja - Thermal resistance junction-case ambient Rθjc - Max. 60.0 2.4 Unit Note °C/W 1 °C/W 1
●Pin configuration TO-252 (TOP VIEW) (BOTTOM VIEW) 2 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE
●Circuit D G S Rev.1.1 1/5 Single N-channel MOSFET
●Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Static drain-source on-resistance Gate...
