Datasheet4U Logo Datasheet4U.com

ELM4N6056FDA-N - Single N-channel MOSFET

General Description

ELM4N6056FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=60V.
  • Id=58A (Vgs=10V).
  • Rds(on) = 8.5mΩ (Vgs=10V).
  • Rds(on) = 12.5mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 60 ±20 58.0 36.6 125.

📥 Download Datasheet

Datasheet Details

Part number ELM4N6056FDA-N
Manufacturer ELM
File Size 2.07 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N6056FDA-N Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ELM452 TRANSISTOR PHOTOCOUPLER Everlight
ELM453 TRANSISTOR PHOTOCOUPLER Everlight
ELM-1081SURWA Dot Matrix Display Everlight
ELM-2001EWA Dot Matrix Display Everlight Electronics
ELM-2001GWA Dot Matrix Display Everlight Electronics

Other Datasheets by ELM

Part Number Description
ELM4N6004FDA-N Single N-channel MOSFET
ELM4N6032FAA-N Single N-channel MOSFET
ELM4N6032FDA-N Single N-channel MOSFET
ELM4N0004FDA-N Single N-channel MOSFET
ELM4N0006FUA-S Single N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Single N-channel MOSFET ELM4N6056FDA-N ■General description ELM4N6056FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=60V • Id=58A (Vgs=10V) • Rds(on) = 8.5mΩ (Vgs=10V) • Rds(on) = 12.5mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 60 ±20 58.0 36.6 125 26.