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ELM53414CA-S - Single N-channel MOSFET

General Description

ELM53414CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Key Features

  • Vds=20V.
  • Id=4.0A.
  • Rds(on) = 40mΩ (Vgs=4.5V).
  • Rds(on) = 50mΩ (Vgs=2.5V).
  • Rds(on) = 70mΩ (Vgs=1.8V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 4.0 A 2.6 10 A 1.25 W 0.80.

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Datasheet Details

Part number ELM53414CA-S
Manufacturer ELM
File Size 790.49 KB
Description Single N-channel MOSFET
Datasheet download datasheet ELM53414CA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-channel MOSFET ELM53414CA-S ■General description ELM53414CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. http://www.elm-tech.com ■Features • Vds=20V • Id=4.0A • Rds(on) = 40mΩ (Vgs=4.5V) • Rds(on) = 50mΩ (Vgs=2.5V) • Rds(on) = 70mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 4.0 A 2.6 10 A 1.25 W 0.80 - 55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Typ. Rθja Max.