EN25S80B Datasheet | Elite Semiconductor Microelectronics Technology

FEATURES - Single power supply operation - Full voltage range: 1.65-1.95 volt - Serial Interface Architecture - SPI patible: Mode 0 and Mode 3 - 8 M-bit Serial Flash - 8 M-bit / 1024 KByte /4096 pages - 256 bytes per programmable page - Standard, Dual or Quad SPI - Standard SPI: CLK, CS#, DI, DO, WP#, HOLD# - Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD# - Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3 - Configurable dummy cycle number - High performance - Normal read - 50MHz - Fast read - Standard SPI: 104MHz with 1 dummy bytes - Dual SPI: 104MHz with 1 dummy bytes - Quad SPI: 104MHz with 3 dummy bytes - Low power consumption - 4.5 m A typical active current - 0.1 A typical power down current - Uniform Sector Architecture: - 256 sectors of 4-Kbyte - 32 blocks of 32-Kbyte - 16 blocks of 64-Kbyte - Any sector or block can be erased individually - Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin - High performance program/erase speed - Page program time: 0.5ms typical - Sector erase time: 40ms typical - Half Block erase time 120ms typical - Block erase time 150ms typical - Chip erase time: 4 seconds typical - Write Suspend and Write Resume - Volatile Status Register Bits - Lockable 3 x 512 byte OTP security...