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EN27LN1G08 - 3.3V NAND Flash Memory

Datasheet Summary

Description

Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

Features

  • Voltage Supply: 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
  • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Page Program Time : 200µs (Typ. ) - Block Erase Time : 1.5m.

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Datasheet Details

Part number EN27LN1G08
Manufacturer EON
File Size 879.19 KB
Description 3.3V NAND Flash Memory
Datasheet download datasheet EN27LN1G08 Datasheet
Additional preview pages of the EN27LN1G08 datasheet.

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Full PDF Text Transcription

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EN27LN1G08 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory EN27LN1G08 Features • Voltage Supply: 2.7V ~ 3.6V • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 25ns (Min.) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 200µs (Typ.) - Block Erase Time : 1.5ms (Typ.
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