EN27LN2G08
EN27LN2G08 is 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
Features
- Voltage Supply: 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (256M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
- Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Page Program Time : 250µs (Typ.)
- Block Erase Time : 2ms (Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- ECC Requirement: 4 bit/512 Byte
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
- mand Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High Performance Program
- Cache Read Operation
- Copy-Back Operation
- EDO mode
- OTP Operation
- Two-Plane Operation
Ordering Information
Product ID EN27LN2G08-25TCP EN27LN2G08-25TIP EN27LN2G08-25CECP EN27LN2G08-25CEIP
Speed 25ns 25ns 25ns 25ns
Package 48-pin TSOP 48-pin TSOP 63 ball FBGA 63 ball FBGA ments Pb-free Pb-free Pb-free Pb-free
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications....
