EN27LN4G08
EN27LN4G08 is 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
Features
- Voltage Supply: 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
- Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Page Program Time : 250µs (Typ.)
- Block Erase Time : 2ms (Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- ECC Requirement: 4 bit/512 Byte
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
- mand Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High Performance Program
- Cache Read Operation
- Copy-Back Operation
- EDO mode
- OTP Operation
- Two-Plane Operation
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., .eonssi.
Rev. A, Issue Date: 2013/10/03
General Description
The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is...
