EN27LN4G08 Datasheet (Elite Semiconductor Microelectronics Technology)

Part EN27LN4G08
Description 3.3V NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 3.01 MB
Elite Semiconductor Microelectronics Technology

EN27LN4G08 Overview

Key Specifications

Operating Voltage: 3.3 V
Max Voltage (typical range): 3.6 V
Min Voltage (typical range): 2.7 V
Length: 18.4 mm

Description

EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply.

Key Features

  • Voltage Supply: 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (512M + 16M) x 8bit
  • Data Register : (2K +
  • Automatic Program and Erase

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.