EN27LN4G08 Description
EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
EN27LN4G08 Key Features
- Voltage Supply: 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
- Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)