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EN27LN4G08 - 3.3V NAND Flash Memory

Datasheet Summary

Description

The device is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply: 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
  • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Page Program Time : 250µs (Typ. ) - Block Erase Time : 2ms (Typ. ).

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Datasheet Details

Part number EN27LN4G08
Manufacturer EON
File Size 3.01 MB
Description 3.3V NAND Flash Memory
Datasheet download datasheet EN27LN4G08 Datasheet
Additional preview pages of the EN27LN4G08 datasheet.

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Full PDF Text Transcription

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EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory EN27LN4G08 Features • Voltage Supply: 2.7V ~ 3.6V • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 25ns (Min.) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 250µs (Typ.) - Block Erase Time : 2ms (Typ.
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